Nichicon UPM1H121MPH6

包装/外壳

TO-18-3

表面安装

NO

端子形状

WIRE

越来越多的功能

通孔安装

介电材料

ALUMINUM (WET)

终端数量

2

Emitter- Base Voltage VEBO

18 V

Pd - Power Dissipation

600 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 175 C

DC Collector/Base Gain hfe Min

2

Collector-Emitter Saturation Voltage

150 uV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Manufacturer

Microchip

Brand

Microchip / Microsemi

Maximum DC Collector Current

100 mA

DC Current Gain hFE Max

400

RoHS

N

Collector- Emitter Voltage VCEO Max

45 V

Package Description

,

Package Style

Radial

Operating Temperature-Min

-55 °C

Operating Temperature-Max

105 °C

Rohs Code

无

Manufacturer Part Number

UPM1H121MPH6

Package Shape

圆柱形封装

Part Life Cycle Code

Obsolete

Ihs Manufacturer

NICHICON CORP

Risk Rank

5.75

Manufacturer Series

PM

系列

PM

JESD-609代码

e0

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

HTS代码

8532.22.00

电容量

120 µF

子类别

Transistors

技术

Si

电容式

铝电解电容器

极性

POLARIZED

配置

Single

额定(DC)电压(URdc)

50 V

泄漏电流

0.18 mA

纹波电流

435 mA

三角形

0.1

正容差

20%

负公差

20%

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

45 V

连续集电极电流

100 mA

产品类别

Bipolar Transistors - BJT

直径

8 mm

达到SVHC

unknown