Nichicon UPM1J331MHH

包装/外壳

TO-33-4

表面安装

NO

端子形状

WIRE

越来越多的功能

通孔安装

介电材料

ALUMINUM (WET)

终端数量

2

Emitter- Base Voltage VEBO

12 V

Pd - Power Dissipation

1 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

5

Collector-Emitter Saturation Voltage

2.5 V

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Manufacturer

Microchip

Brand

Microchip / Microsemi

Maximum DC Collector Current

5 A

DC Current Gain hFE Max

10000

RoHS

N

Collector- Emitter Voltage VCEO Max

150 V

Package Description

,

Package Style

Radial

Operating Temperature-Min

-55 °C

Operating Temperature-Max

105 °C

Rohs Code

无

Manufacturer Part Number

UPM1J331MHH

Package Shape

圆柱形封装

Part Life Cycle Code

Obsolete

Ihs Manufacturer

NICHICON CORP

Risk Rank

5.75

Manufacturer Series

PM

包装

Bulk

系列

PM

JESD-609代码

e0

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

HTS代码

8532.22.00

电容量

330 µF

子类别

Transistors

技术

Si

Reach合规守则

unknown

电容式

铝电解电容器

极性

POLARIZED

配置

Single

额定(DC)电压(URdc)

63 V

泄漏电流

0.6237 mA

纹波电流

1090 mA

三角形

0.08

正容差

20%

负公差

20%

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

150 V

连续集电极电流

5 A

产品类别

Bipolar Transistors - BJT

直径

12.5 mm