Nihon Inter Electronics Corporation PDMB150B12C2
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PDMB150B12C2
1244-PDMB150B12C2
晶体管 - IGBT - 单个
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大陆
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Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
1最小包装量--
PDMB150B12C2详情
Nihon Inter Electronics Corporation PDMB150B12C2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
7
晶体管元件材料
SILICON
Part Life Cycle Code
Transferred
Ihs Manufacturer
NIHON INTER ELECTRONICS CORP
Part Package Code
MODULE
Package Description
FLANGE MOUNT, R-XUFM-X7
Number of Elements
2
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Nom (toff)
800 ns
Turn-on Time-Nom (ton)
400 ns
ECCN 代码
EAR99
端子位置
UPPER
终端形式
UNSPECIFIED
Reach合规守则
unknown
引脚数量
7
JESD-30代码
R-XUFM-X7
资历状况
不合格
配置
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
箱体转运
ISOLATED
极性/通道类型
N-CHANNEL
最大耗散功率(Abs)
730 W
集电极电流-最大值(IC)
150 A
集电极-发射器电压-最大值
1200 V
栅极-发射极电压-最大值
20 V
VCEsat-最大值
2.4 V
PDMB150B12C2拓展信息
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