North American Philips Discrete Products Div BLF246
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BLF246
1891-BLF246
晶体管 - 特殊用途
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大陆
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
1最小包装量--
BLF246详情
North American Philips Discrete Products Div BLF246重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
外壳材料
1
Rise/Fall Time
5 ns
Gross Weight
5.00
Transport Package Size/Quantity
63*35*17/120
Package
DIL14
Current Consumption
20 mA
Part Life Cycle Code
Transferred
Ihs Manufacturer
NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
Package Description
,
Drain Current-Max (ID)
13 A
Operating Temperature-Max
200 °C
系列
DXM1200
包装
Box
零件状态
活跃
ECCN 代码
EAR99
类型
无线控制器
电源电压
3.3 V
深度
20.4 mm
Reach合规守则
unknown
频率
8000 MHz
频率稳定性
+/- 25 ppm
配置
SINGLE
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
工作温度范围
-40...+85 °C
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
130 W
高度
5.4 mm
宽度
12.8 mm
BLF246拓展信息
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
North American Philips Discrete Products Div
Philips Semiconductors
North American Philips Discrete Products Div
North American Philips Discrete Products Div
North American Philips Discrete Products Div
North American Philips Discrete Products Div
Philips Semiconductors







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