NTE ELECT JT-083

包装/外壳

SOIC-8

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.004586 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

6 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

3 nC

Tradename

PowerTrench

Rds On - Drain-Source Resistance

83 mOhms

RoHS

Details

Typical Turn-Off Delay Time

15 ns

Id - Continuous Drain Current

3.4 A

系列

FDS86106

包装

MouseReel

类型

N-Channel Power Trench MOSFET

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

10 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

3.9 mm

高度

1.75 mm

长度

4.9 mm