NXP Semiconductors BT151S-800R,118

工厂交货时间

6 Weeks

ECCN (US)

EAR99

Maximum Rate of Rise of Off-State Voltage (V/us)

1000(Typ)

Maximum Rate of Rise of On-State Current (A/us)

50

Maximum Gate Trigger Voltage (V)

1.5

Maximum Gate Trigger Current (mA)

15

Surge Current Rating (A)

132

Maximum Holding Current (mA)

20

Repetitive Peak Reverse Voltage (V)

800

Maximum Gate Peak Inverse Voltage (V)

5

Peak On-State Voltage (V)

1.75@23A

Repetitive Peak Forward Blocking Voltage (V)

800

Rated Average On-State Current (A)

7.5

RMS On-State Current (A)

12

Repetitive Peak Off-State Current (mA)

0.5

Phase Control

无

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

125

Automotive

Unknown

Supplier Package

DPAK

Mounting

表面贴装

Package Height

2.38(Max)

Package Length

6.73(Max)

Package Width

6.22(Max)

PCB changed

2

Tab

Tab

Package Description

,

Moisture Sensitivity Levels

1

Rohs Code

有

Manufacturer Part Number

BT151S-800R,118

Manufacturer

WeEn Semiconductor Co Ltd

Part Life Cycle Code

活跃

Samacsys Description

THYRISTOR 800V 12A DPAK

Ihs Manufacturer

WEEN SEMICONDUCTORS CO LTD

Risk Rank

0.57

JESD-609代码

e3

零件状态

活跃

ECCN 代码

EAR99

端子表面处理

Tin (Sn)

Reach合规守则

not_compliant

引脚数量

3

触发装置类型

SCR

RoHS状态

是,有豁免