onsemi FDT4N50NZU

安装类型

表面贴装

包装/外壳

TO-261-4, TO-261AA

引脚数

3

供应商器件包装

SOT-223 (TO-261)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5.5V @ 250μA

Power Dissipation (Max)

2W (Tc)

Number of Elements per Chip

1

Package Type

SOT-223

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

5.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

9.1 nC

Rds On - Drain-Source Resistance

3 Ohms

RoHS

Details

Id - Continuous Drain Current

2 A

Qualification

-

Continuous Drain Current Id

2A

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

功率耗散

2W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3Ohm @ 1A, 10V

输入电容(Ciss)(Max)@Vds

476 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

9.1 nC @ 10 V

漏源电压 (Vdss)

500 V

Vgs（最大值）

±25V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET