onsemi NTB004N10G

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

安装类型

表面贴装

供应商器件包装

D2PAK-3 (TO-263-3)

Base Product Number

NTB004

Power Dissipation (Max)

340W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

201A (Ta)

Product Status

活跃

厂商

onsemi

Continuous Drain Current Id

201

Number of Elements per Chip

1

Package Type

D2PAK (TO-263)

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

340 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.139332 oz

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

175 nC

Rds On - Drain-Source Resistance

4.2 mOhms

RoHS

Details

Id - Continuous Drain Current

201 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

包装

MouseReel

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

340

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.2mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 500μA

输入电容(Ciss)(Max)@Vds

11900 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

175 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET