onsemi NTB011N15MC

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

安装类型

表面贴装

供应商器件包装

D2PAK-3 (TO-263-3)

Power Dissipation (Max)

3.75W (Ta), 136.4W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Current - Continuous Drain (Id) @ 25℃

12.5A (Ta), 75.4A (Tc)

Product Status

活跃

厂商

onsemi

Continuous Drain Current Id

75.4

Number of Elements per Chip

1

Package Type

D2PAK (TO-263)

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

3.75 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

37 nC

Rds On - Drain-Source Resistance

10.9 mOhms

Id - Continuous Drain Current

75.4 A

Qualification

-

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

136.4

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

10.9mOhm @ 41A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 223μA

输入电容(Ciss)(Max)@Vds

2810 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

37 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET