onsemi NTBG023N065M3S

包装/外壳

D2PAK-7

RoHS

符合RoHS标准

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

40 A

Rds On - Drain-Source Resistance

33 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

69 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

263 W

Channel Mode

Enhancement

Fall Time

9.6 ns

Factory Pack Quantity

800

Typical Turn-Off Delay Time

35 ns

Typical Turn-On Delay Time

11 ns

包装

Reel

系列

NTBG023N065M3S

配置

Single

通道数量

1 Channel

上升时间

15 ns

晶体管类型

1 N-Channel

产品

SiC MOSFETS