NTBG060N090SC1详情
onsemi NTBG060N090SC1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
供应商器件包装
D2PAK-7
厂商
onsemi
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
5.8A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4.3V @ 5mA
Power Dissipation (Max)
3.6W (Ta), 211W (Tc)
Base Product Number
NTBG060
Id - Continuous Drain Current
44 A
Typical Turn-Off Delay Time
35 ns
RoHS
Details
Rds On - Drain-Source Resistance
84 mOhms
Qg - Gate Charge
88 nC
Brand
onsemi
Manufacturer
onsemi
Channel Mode
Enhancement
Forward Transconductance - Min
16 S
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
800
Minimum Operating Temperature
- 55 C
Unit Weight
0.164906 oz
Vgs - Gate-Source Voltage
- 10 V, + 19 V
Maximum Operating Temperature
+ 175 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
211 W
Vgs th - Gate-Source Threshold Voltage
4.3 V
Typical Turn-On Delay Time
24 ns
Vds - Drain-Source Breakdown Voltage
900 V
系列
-
操作温度
-55°C ~ 175°C (TJ)
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
84mOhm @ 20A, 15V
输入电容(Ciss)(Max)@Vds
1800 pF @ 450 V
门极电荷(Qg)(最大)@Vgs
88 nC @ 15 V
上升时间
23 ns
漏源电压 (Vdss)
900 V
Vgs(最大值)
+19V, -10V
产品类别
MOSFET
晶体管类型
1 N-Channel
场效应管特性
-
产品类别
MOSFET
NTBG060N090SC1拓展信息
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