onsemi NTBGS1D5N06C

安装类型

表面贴装

包装/外壳

TO-263-7, D2Pak (6 Leads + Tab)

供应商器件包装

D2PAK (TO-263)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

35A (Ta), 267A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 12V

Power Dissipation (Max)

3.7W (Ta), 211W (Tc)

Continuous Drain Current Id

267

Number of Elements per Chip

1

Package Type

TO-263-7

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

211 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

78.6 nC

Rds On - Drain-Source Resistance

1.62 mOhms

RoHS

Details

Id - Continuous Drain Current

267 A

MSL

MSL 1 - Unlimited

Qualification

-

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

7

通道数量

1 Channel

功率耗散

211

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.55mOhm @ 64A, 12V

不同 Id 时 Vgs(th)（最大值）

4V @ 318μA

输入电容(Ciss)(Max)@Vds

6250 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

78.6 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET