onsemi NTBGS2D5N06C

安装类型

表面贴装

包装/外壳

TO-263-7, D2Pak (6 Leads + Tab)

供应商器件包装

D2PAK (TO-263)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

27A (Ta), 169A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 12V

Power Dissipation (Max)

3.7W (Ta), 136W (Tc)

Continuous Drain Current Id

169

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

136 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

45.4 nC

Rds On - Drain-Source Resistance

2.65 mOhms

RoHS

Details

Id - Continuous Drain Current

169 A

MSL

MSL 1 - Unlimited

Qualification

-

Number of Elements per Chip

1

Package Type

TO-263-7

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

7

通道数量

1 Channel

功率耗散

136

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.5mOhm @ 35A, 12V

不同 Id 时 Vgs(th)（最大值）

4V @ 175μA

输入电容(Ciss)(Max)@Vds

3510 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

45.4 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET