onsemi NTBLS1D7N08H

安装类型

表面贴装

包装/外壳

8-PowerSFN

供应商器件包装

8-HPSOF

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

29A (Ta), 203A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

3.5W (Ta), 167W (Tc)

Continuous Drain Current Id

203

Number of Elements per Chip

1

Package Type

M0-299A

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

167 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

121 nC

Rds On - Drain-Source Resistance

1.7 mOhms

RoHS

Details

Id - Continuous Drain Current

203 A

MSL

MSL 1 - Unlimited

Qualification

-

系列

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

167

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.7mOhm @ 80A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 479μA

输入电容(Ciss)(Max)@Vds

7675 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

121 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET