onsemi NTH4L015N065SC1

包装/外壳

TO-247-4

安装类型

通孔

引脚数

4

供应商器件包装

TO-247-4L

Power Dissipation (Max)

500W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.3V @ 25mA

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Current - Continuous Drain (Id) @ 25℃

142A (Tc)

Product Status

活跃

Package

Tube

厂商

onsemi

Continuous Drain Current Id

142

Number of Elements per Chip

1

Package Type

TO-247-4

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.3 V

Pd - Power Dissipation

500 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

283 nC

Rds On - Drain-Source Resistance

18 mOhms

Id - Continuous Drain Current

142 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

子类别

MOSFETs

通道数量

1 Channel

功率耗散

500

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

18mOhm @ 75A, 18V

输入电容(Ciss)(Max)@Vds

4790 pF @ 325 V

门极电荷(Qg)(最大)@Vgs

283 nC @ 18 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -8V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET