onsemi NTH4L018N075SC1

包装/外壳

TO-247-4

RoHS

符合RoHS标准

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

750 V

Id - Continuous Drain Current

99 A

Rds On - Drain-Source Resistance

18 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

4.3 V

Qg - Gate Charge

262 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

500 W

Channel Mode

Enhancement

Fall Time

9.6 ns

Factory Pack Quantity

450

Typical Turn-Off Delay Time

46 ns

Typical Turn-On Delay Time

24 ns

包装

Tube

系列

NTH4L018N075SC1

配置

Single

通道数量

1 Channel

上升时间

24 ns

晶体管类型

1 N-Channel

产品

SiC MOSFETS