onsemi NTH4LN019N65S3H

安装类型

通孔

包装/外壳

TO-247-4

引脚数

4

供应商器件包装

TO-247-4

厂商

onsemi

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 14.3mA

Power Dissipation (Max)

625W (Tc)

Continuous Drain Current Id

75

Number of Elements per Chip

1

Package Type

TO-247-4

Channel Mode

Enhancement

Qualification

-

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

625 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

282 nC

Rds On - Drain-Source Resistance

19.3 mOhms

Id - Continuous Drain Current

75 A

操作温度

-55°C ~ 150°C (TJ)

通道数量

1 Channel

功率耗散

625

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

19.3mOhm @ 37.5A, 10V

输入电容(Ciss)(Max)@Vds

15993 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

282 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

信道型

N

场效应管特性

-