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价格梯度
内地含税价
1
¥81.517421
10
¥76.903231
100
¥72.550213
500
¥68.443597
1000
¥64.56943
NTHL080N120SC1A详情
onsemi NTHL080N120SC1A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247-3
厂商
onsemi
Package
Tube
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Power Dissipation (Max)
178W (Tc)
Base Product Number
NTHL080
Continuous Drain Current Id
31
Number of Elements per Chip
1
Package Type
TO-247
Channel Mode
Enhancement
MSL
MSL 1 - Unlimited
Vds - Drain-Source Breakdown Voltage
1.2 kV
Vgs th - Gate-Source Threshold Voltage
4.3 V
Pd - Power Dissipation
178 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 15 V, + 25 V
Unit Weight
0.211644 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
30
Mounting Styles
通孔
Manufacturer
onsemi
Brand
onsemi
Qg - Gate Charge
56 nC
Rds On - Drain-Source Resistance
110 mOhms
RoHS
Details
Id - Continuous Drain Current
31 A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 175°C (TJ)
包装
Tube
子类别
MOSFETs
引脚数量
3
通道数量
1 Channel
功率耗散
178
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
110mOhm @ 20A, 20V
不同 Id 时 Vgs(th)(最大值)
4.3V @ 5mA
输入电容(Ciss)(Max)@Vds
1670 pF @ 800 V
门极电荷(Qg)(最大)@Vgs
56 nC @ 20 V
漏源电压 (Vdss)
1200 V
Vgs(最大值)
+25V, -15V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品类别
MOSFET
NTHL080N120SC1A拓展信息
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