onsemi NTMFS008N12MCT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

引脚数

8

供应商器件包装

5-DFN (5x6) (8-SOFL)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

12A (Ta), 79A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 200μA

Power Dissipation (Max)

2.7W (Ta), 102W (Tc)

Number of Elements per Chip

1

Package Type

SO-8FL

Vds - Drain-Source Breakdown Voltage

120 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

102 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

33 nC

Rds On - Drain-Source Resistance

8 mOhms

RoHS

Details

Id - Continuous Drain Current

79 A

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

79A

系列

-

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

功率耗散

102W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8mOhm @ 36A, 10V

输入电容(Ciss)(Max)@Vds

2705 pF @ 60 V

门极电荷(Qg)(最大)@Vgs

33 nC @ 10 V

漏源电压 (Vdss)

120 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET