onsemi NTMFS0D9N03CGT1G

包装/外壳

SO-8FL-4

安装类型

表面贴装

供应商器件包装

5-DFN (5x6) (8-SOFL)

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

144 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.006173 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

70 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

131.4 nC

Rds On - Drain-Source Resistance

900 uOhms

Typical Turn-Off Delay Time

93 ns

Id - Continuous Drain Current

298 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

NTMFS0

Current - Continuous Drain (Id) @ 25℃

48A (Ta), 298A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

onsemi

Power Dissipation (Max)

3.8W (Ta), 144W (Tc)

Product Status

活跃

包装

切割胶带

操作温度

-55°C ~ 175°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.9mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.2V @ 200µA

输入电容(Ciss)(Max)@Vds

9450 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

131.4 nC @ 10 V

上升时间

16 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET