onsemi NTMFS3D2N10MDT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

供应商器件包装

5-DFN (5x6) (8-SOFL)

厂商

onsemi

Package

Cut Tape (CT)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

19A (Ta), 142A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

2.8W (Ta), 155W (Tc)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

142A

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

155 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

48 nC

Rds On - Drain-Source Resistance

3.5 mOhms

Id - Continuous Drain Current

142 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

功率耗散

155W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.5mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 316μA

输入电容(Ciss)(Max)@Vds

3900 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

71.3 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET