onsemi NTMJS0D9N04CTWG

安装类型

表面贴装

包装/外壳

SOT-1205, 8-LFPAK56

供应商器件包装

8-LFPAK

厂商

onsemi

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

52A (Ta), 342A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

4.2W (Ta), 180W (Tc)

Base Product Number

NTMJS0

Continuous Drain Current Id

342

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

180 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003508 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

400 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

117 nC

Rds On - Drain-Source Resistance

810 uOhms

Typical Turn-Off Delay Time

71 ns

Id - Continuous Drain Current

342 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

Reel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

180

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.81mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250μA

输入电容(Ciss)(Max)@Vds

7400 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

117 nC @ 10 V

上升时间

14 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET