onsemi NTMT090N65S3HF

安装类型

表面贴装

包装/外壳

4-PowerTSFN

供应商器件包装

4-PQFN (8x8)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

272W (Tc)

Continuous Drain Current Id

36

Number of Elements per Chip

1

Package Type

PQFN4 8 x 8

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

272 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

66 nC

Rds On - Drain-Source Resistance

90 mOhms

Id - Continuous Drain Current

36 A

操作温度

-55°C ~ 150°C (TJ)

引脚数量

4

通道数量

1 Channel

功率耗散

272

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

90mOhm @ 18A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 860μA

输入电容(Ciss)(Max)@Vds

2930 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

66 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

信道型

N

场效应管特性

-