onsemi NTMTS6D0N15MC

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-DFNW (8.3x8.4)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

19A (Ta), 135A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Power Dissipation (Max)

4.9W (Ta), 245W (Tc)

Continuous Drain Current Id

135

Number of Elements per Chip

1

Package Type

DFNW8

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

245 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

58 nC

Rds On - Drain-Source Resistance

6.4 mOhms

RoHS

Details

Id - Continuous Drain Current

135 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

245

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.4mOhm @ 69A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 379μA

输入电容(Ciss)(Max)@Vds

4815 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

58 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET