onsemi NTP011N15MC

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

厂商

onsemi

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9.8A (Ta), 74.3A (Tc)

Power Dissipation (Max)

2.4W (Ta), 136.4W (Tc)

Base Product Number

NTP011

Number of Elements per Chip

1

Package Type

TO-220

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

136.4 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

37 nC

Rds On - Drain-Source Resistance

10.9 mOhms

RoHS

Details

Id - Continuous Drain Current

74.3 A

Continuous Drain Current Id

74.3A

Qualification

-

MSL

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

136.4W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

10.9mOhm @ 41A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 223μA

输入电容(Ciss)(Max)@Vds

2810 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

37 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET