onsemi NTP360N80S3Z

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220-3

厂商

onsemi

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

96W (Tc)

Base Product Number

NTP360

Continuous Drain Current Id

13

Number of Elements per Chip

1

Package Type

TO-220

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

800 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

96 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

25.3 nC

Rds On - Drain-Source Resistance

360 mOhms

RoHS

Details

Id - Continuous Drain Current

13 A

MSL

MSL 1 - Unlimited

Qualification

-

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

96

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

360mOhm @ 6.5A, 10V

不同 Id 时 Vgs(th)（最大值）

3.8V @ 300μA

输入电容(Ciss)(Max)@Vds

1143 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

25.3 nC @ 10 V

漏源电压 (Vdss)

800 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET