onsemi NTPF450N80S3Z

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

引脚数

3

供应商器件包装

TO-220-3 Fullpack/TO-220F-3SG

厂商

onsemi

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

11A (Tj)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 240μA

Power Dissipation (Max)

29.5W (Tc)

Base Product Number

NTPF450

Continuous Drain Current Id

11

Number of Elements per Chip

1

Package Type

TO-220

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

800 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

29.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

19.3 nC

Rds On - Drain-Source Resistance

450 mOhms

RoHS

Details

Id - Continuous Drain Current

11 A

MSL

-

Qualification

-

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

功率耗散

29.5

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

450mOhm @ 5.5A, 10V

输入电容(Ciss)(Max)@Vds

885 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

19.3 nC @ 10 V

漏源电压 (Vdss)

800 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET