onsemi NTTFS030N06CTAG

安装类型

表面贴装

包装/外壳

8-PowerWDFN

供应商器件包装

8-WDFN (3.3x3.3)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

6A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

2.5W (Ta), 23W (Tc)

Base Product Number

NTTFS030

Continuous Drain Current Id

19

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

23 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

4.7 nC

Rds On - Drain-Source Resistance

29.7 mOhms

RoHS

Details

Id - Continuous Drain Current

19 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

23

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

29.7mOhm @ 3A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 13μA

输入电容(Ciss)(Max)@Vds

255 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

4.7 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET