onsemi NTTFS6H854NLTAG

安装类型

表面贴装

包装/外壳

8-PowerWDFN

供应商器件包装

8-WDFN (3.3x3.3)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

10A (Ta), 41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

3.2W (Ta), 54W (Tc)

Base Product Number

NTTFS6

Continuous Drain Current Id

41

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

54 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

56 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

17 nC

Rds On - Drain-Source Resistance

13.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

17 ns

Id - Continuous Drain Current

41 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

54

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

13.4mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 45μA

输入电容(Ciss)(Max)@Vds

902 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

17 nC @ 10 V

上升时间

36 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET