onsemi NVBLS0D5N04CTXG

安装类型

表面贴装

包装/外壳

8-PowerSFN

供应商器件包装

8-HPSOF

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

65A (Ta), 300A (Tc)

Power Dissipation (Max)

4.3W (Ta), 198.4W (Tc)

Base Product Number

NVBLS0

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

198.4 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

185 nC

Rds On - Drain-Source Resistance

570 uOhms

RoHS

Details

Id - Continuous Drain Current

300 A

MSL

-

Qualification

AEC-Q101

Continuous Drain Current Id

300A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

功率耗散

198.4W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.57mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 475μA

输入电容(Ciss)(Max)@Vds

12600 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

185 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

+20V, -16V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET