NVMFS5C420NLWFT1G详情
onsemi NVMFS5C420NLWFT1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerTDFN, 5 Leads
供应商器件包装
5-DFN (5x6) (8-SOFL)
厂商
onsemi
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
45A (Ta), 277A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
3.8W (Ta), 146W (Tc)
Number of Elements per Chip
1
Package Type
DFN
Channel Mode
Enhancement
Vds - Drain-Source Breakdown Voltage
40 V
Vgs th - Gate-Source Threshold Voltage
2.2 V
Pd - Power Dissipation
146 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1500
Mounting Styles
SMD/SMT
Manufacturer
onsemi
Brand
onsemi
Qg - Gate Charge
100 nC
Rds On - Drain-Source Resistance
1 mOhms
RoHS
N
Id - Continuous Drain Current
277 A
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Continuous Drain Current Id
277A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 175°C (TJ)
包装
切割胶带
子类别
MOSFETs
引脚数量
5
通道数量
1 Channel
功率耗散
146W
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1mOhm @ 50A, 10V
不同 Id 时 Vgs(th)(最大值)
2.2V @ 200μA
输入电容(Ciss)(Max)@Vds
7020 pF @ 20 V
门极电荷(Qg)(最大)@Vgs
100 nC @ 10 V
漏源电压 (Vdss)
40 V
Vgs(最大值)
±20V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品类别
MOSFET
NVMFS5C420NLWFT1G拓展信息
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