onsemi NVMFS6H818NLT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

供应商器件包装

5-DFN (5x6) (8-SOFL)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

22A (Ta), 135A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

3.8W (Ta), 140W (Tc)

Base Product Number

NVMFS6

Continuous Drain Current Id

135

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

140 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

64 nC

Rds On - Drain-Source Resistance

3.2 mOhms

RoHS

Details

Id - Continuous Drain Current

135 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

140

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.2mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 190μA

输入电容(Ciss)(Max)@Vds

3844 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

64 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET