onsemi NVMFS6H852NLT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

供应商器件包装

5-DFN (5x6) (8-SOFL)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

11A (Ta), 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

3.6W (Ta), 54W (Tc)

Base Product Number

NVMFS6

厂商

onsemi

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

29 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Qualification

AEC-Q101

Pd - Power Dissipation

54 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.006173 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

55 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

17 nC

Rds On - Drain-Source Resistance

13.1 mOhms

Typical Turn-Off Delay Time

18 ns

Id - Continuous Drain Current

42 A

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

13.1mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 45μA

输入电容(Ciss)(Max)@Vds

906 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

17 nC @ 10 V

上升时间

53 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET