onsemi NVTFS4C02NTAG

安装类型

表面贴装

包装/外壳

8-PowerWDFN

供应商器件包装

8-WDFN (3.3x3.3)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

28.3A (Ta), 162A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

3.2W (Ta), 107W (Tc)

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

3.2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

20 nC

Rds On - Drain-Source Resistance

2.25 mOhms

RoHS

Details

Id - Continuous Drain Current

162 A

Number of Elements per Chip

1

Package Type

WDFN

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

162A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

107W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.25mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.2V @ 250μA

输入电容(Ciss)(Max)@Vds

2980 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

20 nC @ 4.5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET