ON Semiconductor 2SJ612

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

2SJ612

Part Life Cycle Code

Transferred

Ihs Manufacturer

SANYO ELECTRIC CO LTD

Package Description

SMALL OUTLINE, R-PSSO-F3

Risk Rank

5.4

Drain Current-Max (ID)

2.5 A

Number of Elements

1

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

小概要

ECCN 代码

EAR99

端子位置

SINGLE

终端形式

FLAT

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-PSSO-F3

资历状况

不合格

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

最大漏极电流 (Abs) (ID)

2.5 A

漏极-源极导通最大电阻

0.245 Ω

DS 击穿电压-最小值

20 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

3.5 W