ON Semiconductor BSS138-G

包装/外壳

SOT-23-3

安装类型

表面贴装

表面安装

YES

供应商器件包装

SOT-23-3 (TO-236)

终端数量

3

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

50 V

Id - Continuous Drain Current

220 mA

Rds On - Drain-Source Resistance

3.5 Ohms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

1.5 V

Qg - Gate Charge

1.7 nC

Minimum Operating Temperature

- 50 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

350 mW

Channel Mode

Enhancement

Fall Time

7 ns

Forward Transconductance - Min

0.12 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

20 ns

Typical Turn-On Delay Time

2.5 ns

Unit Weight

0.000282 oz

Continuous Drain Current Id

220

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

BSS138

Current - Continuous Drain (Id) @ 25℃

220mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

360mW (Ta)

Product Status

活跃

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BSS138-G

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

COMCHIP TECHNOLOGY CO LTD

Risk Rank

5.48

Drain Current-Max (ID)

0.22 A

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

系列

-

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

R-PDSO-G3

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

360

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.5Ohm @ 220mA, 10V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 1mA

输入电容(Ciss)(Max)@Vds

27 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

2.4 nC @ 10 V

上升时间

9 ns

漏源电压 (Vdss)

50 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

晶体管类型

1 N-Channel

漏极-源极导通最大电阻

6 Ω

DS 击穿电压-最小值

50 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-