ON Semiconductor CPH6429-TL-E

包装/外壳

SOT-23-6 Thin, TSOT-23-6

安装类型

表面贴装

供应商器件包装

6-CPH

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

-

Product Status

Obsolete

Power Dissipation (Max)

1.6W (Ta)

厂商

onsemi

Current - Continuous Drain (Id) @ 25℃

2A (Ta)

Package

Bulk

系列

-

操作温度

150°C (TJ)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

220mOhm @ 1A, 4V

输入电容(Ciss)(Max)@Vds

325 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

4.2 nC @ 4 V

漏源电压 (Vdss)

60 V

场效应管特性

-