ON Semiconductor FDD6685-G
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FDD6685-G
1807-FDD6685-G
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

MOSFET N-CH 60V SUPERSOT6
1最小包装量--
FDD6685-G详情
ON Semiconductor FDD6685-G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
TO-252AA
Package
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25℃
11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
onsemi
Power Dissipation (Max)
1.6W (Ta)
Product Status
Obsolete
操作温度
-55°C ~ 175°C (TJ)
系列
PowerTrench®
技术
MOSFET (Metal Oxide)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
20mOhm @ 11A, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 250µA
输入电容(Ciss)(Max)@Vds
1715 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
24 nC @ 5 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±25V
场效应管特性
-
FDD6685-G拓展信息
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