ON Semiconductor FDD8896_G
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FDD8896_G
1807-FDD8896_G
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

MOSFET N-CH 30V TO252AA
1最小包装量--
FDD8896_G详情
ON Semiconductor FDD8896_G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
TO-252AA
Package
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25℃
17A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
onsemi
Power Dissipation (Max)
80W (Tc)
Product Status
Obsolete
操作温度
-55°C ~ 175°C (TJ)
系列
Automotive, AEC-Q101, PowerTrench®
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
5.7mOhm @ 35A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250µA
输入电容(Ciss)(Max)@Vds
2525 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
60 nC @ 10 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
场效应管特性
-
FDD8896_G拓展信息
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