ON Semiconductor FDR836P
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FDR836P
1807-FDR836P
晶体管 - FET,MOSFET - 单个
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FDR836P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at utmel
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FDR836P详情
ON Semiconductor FDR836P重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
YES
终端数量
8
晶体管元件材料
SILICON
Package Description
SUPERSOT-8
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Manufacturer Part Number
FDR836P
Package Shape
RECTANGULAR
Manufacturer
Rochester Electronics LLC
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Risk Rank
5.4
Part Package Code
SOT
Drain Current-Max (ID)
6.1 A
端子位置
DUAL
终端形式
鸥翼
Reach合规守则
unknown
引脚数量
8
JESD-30代码
R-PDSO-G8
资历状况
COMMERCIAL
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
漏极-源极导通最大电阻
0.03 Ω
DS 击穿电压-最小值
20 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
FDR836P拓展信息
ON Semiconductor
ON Semiconductor
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