ON Semiconductor FQI19N20CTU

安装类型

通孔

包装/外壳

TO-262-3 Long Leads, I2Pak, TO-262AA

供应商器件包装

I2PAK (TO-262)

Current - Continuous Drain (Id) @ 25℃

19A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

3.13W Ta 139W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

操作温度

-55°C~150°C TJ

包装

Tube

系列

QFET®

零件状态

Obsolete

湿度敏感性等级(MSL)

1 (Unlimited)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

170mOhm @ 9.5A, 10V

输入电容(Ciss)(Max)@Vds

1080pF @ 25V

门极电荷(Qg)(最大)@Vgs

53nC @ 10V

漏源电压 (Vdss)

200V

Vgs（最大值）

±30V