ON Semiconductor FQT4N20TF
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FQT4N20TF
1807-FQT4N20TF
晶体管 - FET,MOSFET - 单个
TO-261-4, TO-261AA
大陆
立即发货

MOSFET N-CH 200V 0.85A SOT-223
1最小包装量--
FQT4N20TF详情
ON Semiconductor FQT4N20TF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-261-4, TO-261AA
供应商器件包装
SOT-223-4
Current - Continuous Drain (Id) @ 25℃
850mA Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
2.2W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
已出版
2001
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1.4Ohm @ 425mA, 10V
输入电容(Ciss)(Max)@Vds
220pF @ 25V
门极电荷(Qg)(最大)@Vgs
6.5nC @ 10V
漏源电压 (Vdss)
200V
Vgs(最大值)
±30V
FQT4N20TF拓展信息
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哦! 它是空的。