ON Semiconductor HGTP12N60B3D

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Turn-on Time-Nom (ton)

45 ns

Turn-off Time-Nom (toff)

392 ns

Operating Temperature-Max

150 °C

Rohs Code

无

Manufacturer Part Number

HGTP12N60B3D

Package Shape

RECTANGULAR

Manufacturer

Intersil Corporation

Number of Elements

1

Part Life Cycle Code

Transferred

Ihs Manufacturer

INTERSIL CORP

Risk Rank

5.13

JESD-609代码

e0

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

附加功能

低导通损耗

子类别

绝缘栅BIP晶体管

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

not_compliant

JESD-30代码

R-PSFM-T3

资历状况

不合格

配置

SINGLE WITH BUILT-IN DIODE

箱体转运

COLLECTOR

晶体管应用

MOTOR CONTROL

极性/通道类型

N-CHANNEL

最大耗散功率(Abs)

104 W

集电极电流-最大值(IC)

27 A

集电极-发射器电压-最大值

600 V

栅极-发射极电压-最大值

20 V

栅极-发射极Thr电压-最大值

6 V