对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 表面安装 | 终端数量 | 晶体管元件材料 | JESD-609代码 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 操作模式 | 晶体管应用 | 极性/通道类型 | JEDEC-95代码 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 反馈上限-最大值 (Crss) | 环境耗散-最大值 | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | NDP605A | National Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | 5.72 | NDP605A | 活跃 | unknown | ||||||||||||||||||||||||||||||||||||||||||
![]() | NDP6051 | National Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 3 | SILICON | Transferred | NATIONAL SEMICONDUCTOR CORP | FLANGE MOUNT, R-PSFM-T3 | 5.8 | 48 A | 1 | 175 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 205 ns | 270 ns | NDP6051 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | TO-220AB | 48 A | 0.022 Ω | 144 A | 50 V | 300 mJ | METAL-OXIDE SEMICONDUCTOR | 100 W | 100 W | |||||||||
NDP6050L | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 3 | SILICON | 48 A | 1 | 175 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 400 ns | 530 ns | 无 | Transferred | NATIONAL SEMICONDUCTOR CORP | FLANGE MOUNT, R-PSFM-T3 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 逻辑电平兼容 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | TO-220AB | 0.025 Ω | 144 A | 50 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 100 W | 400 pF | 100 W | ||||||||||
NDP6050L | National Semiconductor Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 3 | SILICON | 48 A | 1 | 175 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 400 ns | 530 ns | 无 | Transferred | NATIONAL SEMICONDUCTOR CORP | TO-220, 3 PIN | e0 | EAR99 | Tin/Lead (Sn/Pb) | 逻辑电平兼容 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | compliant | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | TO-220AB | 0.025 Ω | 144 A | 50 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 100 W | 400 pF | 100 W | ||||||||||
![]() | NDP6050L | Fairchild Semiconductor Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 3 | SILICON | 48 A | 1 | 175 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 无 | Obsolete | FAIRCHILD SEMICONDUCTOR CORP | TO-220AB | TO-220, 3 PIN | e0 | EAR99 | 锡铅 | 逻辑电平兼容 | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | TO-220AB | 0.025 Ω | 144 A | 50 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 100 W | ||||||||||||
![]() | NDP605BEL | National Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 3 | SILICON | 175 °C | 1 | 42 A | 8.1 | TO-220, 3 PIN | NATIONAL SEMICONDUCTOR CORP | Obsolete | 无 | NDP605BEL | 未说明 | FLANGE MOUNT | RECTANGULAR | PLASTIC/EPOXY | e0 | EAR99 | Tin/Lead (Sn/Pb) | 逻辑电平兼容 | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSFM-T3 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | TO-220AB | 44 A | 0.028 Ω | 50 V | METAL-OXIDE SEMICONDUCTOR | 100 W | 100 W |
NDP605A
National Semiconductor
分类:Integrated Circuits (ICs)
NDP6051
National Semiconductor
分类:Integrated Circuits (ICs)
NDP6050L
Texas Instruments
分类:Transistors - Special Purpose
NDP6050L
National Semiconductor Corporation
分类:Transistors - Special Purpose
NDP6050L
Fairchild Semiconductor Corporation
分类:Transistors - Special Purpose
NDP605BEL
National Semiconductor
分类:Integrated Circuits (ICs)


哦! 它是空的。