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价格梯度
内地含税价
1
¥72.555242
10
¥68.448343
100
¥64.57391
500
¥60.918785
1000
¥57.470551
ON Semiconductor NTBG060N065SC1
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NTBG060N065SC1
1807-NTBG060N065SC1
晶体管 - FET,MOSFET - 单个
D2PAK-7L
大陆
立即发货

MOSFET Silicon Carbide (SiC) MOSFET - 44 mohm, 650 V, M2, D2PAK-7L
--最小包装量--
¥
总价: ¥
NTBG060N065SC1详情
ON Semiconductor NTBG060N065SC1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
D2PAK-7L
安装类型
表面贴装
供应商器件包装
D2PAK-7
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - Continuous Drain Current
46 A
Rds On - Drain-Source Resistance
70 mOhms
Vgs - Gate-Source Voltage
- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage
4.3 V
Qg - Gate Charge
74 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Channel Mode
Enhancement
Fall Time
11 ns
Forward Transconductance - Min
12 S
Factory Pack QuantityFactory Pack Quantity
800
Typical Turn-Off Delay Time
24 ns
Typical Turn-On Delay Time
11 ns
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number
NTBG060
Current - Continuous Drain (Id) @ 25℃
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
厂商
onsemi
Power Dissipation (Max)
170W (Tc)
Product Status
活跃
Package Type
D2PAK-7L
Pd - Power Dissipation
170 W
包装
切割胶带
系列
NTBG060N065SC1
操作温度
-55°C ~ 175°C (TJ)
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
70mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
4.3V @ 6.5mA
输入电容(Ciss)(Max)@Vds
1473 pF @ 325 V
门极电荷(Qg)(最大)@Vgs
74 nC @ 18 V
上升时间
14 ns
漏源电压 (Vdss)
650 V
Vgs(最大值)
+22V, -8V
晶体管类型
1 N-Channel
信道型
N
场效应管特性
-
NTBG060N065SC1拓展信息
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