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价格梯度
内地含税价
1
¥34.676681
10
¥32.713852
100
¥30.862121
500
¥29.115207
1000
¥27.46718
ON Semiconductor NTBG1000N170M1
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- 对比
NTBG1000N170M1
1807-NTBG1000N170M1
晶体管 - FET,MOSFET - 单个
D2PAK-7L
大陆
立即发货

MOSFET SIC 1700V MOS 1O IN TO263-7L
--最小包装量--
¥
总价: ¥
NTBG1000N170M1详情
ON Semiconductor NTBG1000N170M1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
D2PAK-7L
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
1.7 kV
Id - Continuous Drain Current
4.3 A
Rds On - Drain-Source Resistance
960 mOhms
Vgs - Gate-Source Voltage
- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage
4.3 V
Qg - Gate Charge
13.9 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
51 W
Channel Mode
Enhancement
Fall Time
16 ns
Forward Transconductance - Min
0.6 S
Typical Turn-Off Delay Time
10 ns
Typical Turn-On Delay Time
10 ns
包装
Reel
配置
Single
通道数量
1 Channel
上升时间
6 ns
NTBG1000N170M1拓展信息
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