ON Semiconductor NTD5C632NLT4G

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

DPAK

Continuous Drain Current Id

155

Package Type

DPAK (TO-252)

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

115 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

78 nC

Rds On - Drain-Source Resistance

2.5 mOhms

Id - Continuous Drain Current

155 A

Package

Tape & Reel (TR);Cut Tape (CT);

Current - Continuous Drain (Id) @ 25℃

29A (Ta), 155A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

4W (Ta), 115W (Tc)

Product Status

活跃

操作温度

-55°C ~ 175°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

通道数量

1 Channel

功率耗散

115

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.5mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

2.1V @ 250µA

输入电容(Ciss)(Max)@Vds

5700 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

34 nC @ 4.5 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品

MOSFET

产品类别

MOSFET