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价格梯度
内地含税价
1
¥5.119815
10
¥4.830015
100
¥4.556619
500
¥4.2987
1000
¥4.055373
ON Semiconductor NTD78N03R-1G
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NTD78N03R-1G
1807-NTD78N03R-1G
晶体管 - FET,MOSFET - 单个
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大陆
立即发货

11.3A, 25V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3
--最小包装量--
¥
总价: ¥
NTD78N03R-1G详情
ON Semiconductor NTD78N03R-1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Package
Bulk
厂商
onsemi
Product Status
活跃
Package Description
LEAD FREE, CASE 369D-01, DPAK-3
Package Style
IN-LINE
Moisture Sensitivity Levels
未说明
Package Body Material
PLASTIC/EPOXY
Manufacturer Package Code
CASE 369D-01
Reflow Temperature-Max (s)
40
Rohs Code
有
Manufacturer Part Number
NTD78N03R-1G
Package Shape
RECTANGULAR
Manufacturer
Rochester Electronics LLC
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Risk Rank
5.29
Drain Current-Max (ID)
11.3 A
系列
*
JESD-609代码
e3
无铅代码
有
端子表面处理
哑光锡
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
260
Reach合规守则
unknown
引脚数量
3
JESD-30代码
R-PSIP-T3
资历状况
COMMERCIAL
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.009 Ω
脉冲漏极电流-最大值(IDM)
98 A
DS 击穿电压-最小值
25 V
雪崩能量等级(Eas)
75 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
NTD78N03R-1G拓展信息
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哦! 它是空的。