ON Semiconductor NTH4L020N090SC1

包装/外壳

TO-247-4L

安装类型

通孔

供应商器件包装

TO-247-4L

Typical Turn-On Delay Time

54 ns

Typical Turn-Off Delay Time

29 ns

Factory Pack QuantityFactory Pack Quantity

30

Forward Transconductance - Min

49 S

Fall Time

14 ns

Channel Mode

Enhancement

Pd - Power Dissipation

484 W

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 55 C

Qg - Gate Charge

196 nC

Vgs th - Gate-Source Threshold Voltage

4.3 V

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Rds On - Drain-Source Resistance

28 mOhms

Id - Continuous Drain Current

118 A

Vds - Drain-Source Breakdown Voltage

900 V

Transistor Polarity

N-Channel

Mounting Styles

通孔

RoHS

Details

Package

Tube

Base Product Number

NTH4L02

Current - Continuous Drain (Id) @ 25℃

116A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

厂商

onsemi

Power Dissipation (Max)

484W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.3V @ 20mA

系列

NTH4L020N090SC1

包装

Tube

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

28mOhm @ 60A, 15V

输入电容(Ciss)(Max)@Vds

4415 pF @ 450 V

门极电荷(Qg)(最大)@Vgs

196 nC @ 15 V

上升时间

28 ns

漏源电压 (Vdss)

900 V

Vgs（最大值）

+22V, -8V

场效应管特性

-