ON Semiconductor NTMFD1D1N02X

包装/外壳

PQFN-8

安装类型

表面贴装

供应商器件包装

8-PQFN (5x6)

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

25 V

Id - Continuous Drain Current

75 A, 178 A

Rds On - Drain-Source Resistance

3 mOhms, 870 uOhms

Vgs - Gate-Source Voltage

- 12 V, + 16 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Qg - Gate Charge

59 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

27 W, 44 W

Channel Mode

Enhancement

Fall Time

2.5 ns, 6 ns

Forward Transconductance - Min

123 S, 322 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

12 ns, 26 ns

Typical Turn-On Delay Time

10 ns, 21 ns

Package

Tape & Reel (TR)

Base Product Number

NTMFD1

Current - Continuous Drain (Id) @ 25℃

14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)

厂商

onsemi

Product Status

活跃

系列

NTMFD1D1N02X

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

配置

Dual

通道数量

2 Channel

功率 - 最大

960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)

Rds On(Max)@Id,Vgs

3mOhm @ 20A, 10V, 870µOhm @ 37A, 10V

不同 Id 时 Vgs(th)（最大值）

2.1V @ 240µA, 2.1V @ 850µA

输入电容(Ciss)(Max)@Vds

1080pF @ 12V, 4265pF @ 12V

门极电荷(Qg)(最大)@Vgs

15nC @ 10V, 59nC @ 10V

上升时间

2.5 ns, 6.6 ns

漏源电压 (Vdss)

25V

场效应管特性

-